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IRFNJ540
MECHANICAL DATA Dimensions in mm (inches)
7.54 (0.296) 0.76 (0.030)
min.
2.41 (0.095) 2.41 (0.095) 0.127 (0.005)
3.175 (0.125) Max.
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
VDSS ID(cont) RDS(on)
FEATURES
3.05 (0.120)
1
3
10.16 (0.400)
5.72 (.225)
2
100V 12A 0.052
0.76 (0.030) min.
0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005)
0.50 (0.020) max.
* HERMETICALLY SEALED * SIMPLE DRIVE REQUIREMENTS
SMD 05 (TO-276AA)
Pad 1 - Source Pad 2 - Drain Pad 3 - Gate
* LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE
(also available as IRF9530SMD05 with Gate and Source reversed)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
BVDS VGS ID ID IDM PD TJ , Tstg RJC Drain - Source BreakdownVoltage Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case 100V 20V 22A 16A 88A 75W 0.6W/C -55 to +150C 1.67C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Document Number 5724 Issue 1
IRFNJ540
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated)
Parameter
BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance* Forward Transconductance* Zero Gate Voltage Drain Current (VGS = 0) Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Test Conditions
VGS = 0 ID = 250A ID = 1mA
Min.
100
Typ.
Max.
Unit
V
BVDSS Temperature Coefficient of
Reference to 25C VGS = 10V VDS = VGS VDS 50V VDS = 100V VDS = 80V VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 16A VDS = 0.8BVDSS VDD = 50V ID = 16A RG = 7.5 VGS = 10V
0.11 0.052 2 11 25 250 100 -100 1487 353 182 104 20 43 24 125 86 82 22 88 4
V / C V S( A nA )(
ID = 16A ID = 250A IDS = 16A TJ = 150C
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr Notes
pF
nC
ns
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage* Reverse Recovery Time Reverse Recovery Charge IS = 16A IF = 16A di / dt 100A/s VGS = 0V VDD 50V
A V ns C
1.3 240 1.67
* Pulse Test: Pulse Width 300s, 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Document Number 5724 Issue 1

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